Oscillation analysis and current peak reduction in paralleled SiC MOSFETs
Author:
Affiliation:
1. Graduate School of Science and EngineeringShimane University1060 NishikawatsuMatsueShimaneJapan
2. Institute of Materials and Systems for SustainabilityNagoya University, Furo, ChikusaNagoyaAichiJapan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2017.0255
Reference21 articles.
1. High frequency power switch - improved performance by MOSFETs and IGBTs connected in parallel
2. Challenges Regarding Parallel Connection of SiC JFETs
3. Wang G. Mookken J. Rice J.: ‘Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications’.Proc. IEEE Applied Power Electronics Conf. and Exposition Fort Worth TX USA March2014 pp.1478–1483
4. Dynamic characterization of parallel‐connected high‐power IGBT modules;Chen N.;IEEE Trans. Ind. Electron.,2015
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