Design of an Efficient GeSn Based Grating Coupler to excite Plasmon Waves in $\mathbf{3}-\mathbf{20}\ \boldsymbol{\mu}\mathbf{m}$ MIR Range in GeSn/SiGeSn Structure on Si Platform
Author:
Affiliation:
1. Institute of Radio Physics and Electronics, University of Calcutta,Kolkata,INDIA,700009
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10118363/10118434/10118442.pdf?arnumber=10118442
Reference11 articles.
1. Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnxAlloy
2. Si–Ge–Sn alloys: From growth to applications
3. Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density
4. Review of mid-infrared plasmonic materials
5. Theoretical and experimental study of plasmonic effects in heavily doped gallium arsenide and indium phosphide
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