Direct Observation of Void Nucleation and Growth in a 2-µm-Wide Cu Redistribution Line During In Situ Electromigration-Reference-Cited by-同舟云学术

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Direct Observation of Void Nucleation and Growth in a 2-µm-Wide Cu Redistribution Line During In Situ Electromigration

Published:2024-04-17 Issue: Volume:24 Page:1-2
ISSN:
Container-title:2024 International Conference on Electronics Packaging (ICEP)
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Author:

Liang Chien-Lung¹,Lin Yung-Sheng²,Tsai Min-Yan²,Chiu Meng-Chun¹,Wang Shan-Bo²,Hung Chih-Pin²,Lin Kwang-Lung³

Affiliation:

1. National Taiwan University of Science and Technology,Department of Materials Science and Engineering,Taipei,Taiwan,106335

2. Corporate R&D, Advanced Semiconductor Engineering (ASE) Group,Kaohsiung,Taiwan,81170

3. National Cheng Kung University,Department of Materials Science and Engineering,Tainan,Taiwan,70101

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10535428/10535429/10535693.pdf?arnumber=10535693

Reference6 articles.

1. Photosensitive polymer reliability for fine pitch RDL applications

2. Athermal and thermal coupling electromigration effects on the microstructure and failure mechanism in advanced fine-pitch Cu interconnects under extremely high current density

3. Electromigration Reliability of Advanced High-Density Fan-Out Packaging With Fine-Pitch 2-/2-μm L/S Cu Redistribution Lines

4. Electromigration Failure Study of a Fine-pitch 2μm/2μm L/S Cu Redistribution Line Embedded in Polyimide for Advanced High-density Fan-out Packaging

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