E-Band Transmitter with 3 W Complex Modulated Signal Output Power Performance
Author:
Affiliation:
1. Institute of Robust Power Semiconductor Systems, University of Stuttgart,Germany
2. RPG-Radiometer Physics GmbH,Germany
3. Fraunhofer Institute for Applied Solid State Physics (IAF),Germany
Funder
German Federal Ministry of Economics and Technology (BMWi)
German Aerospace Center (DLR)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9784154/9783612/09784314.pdf?arnumber=9784314
Reference16 articles.
1. Metamorphic 94 GHz power amplifier MMICs
2. High-Power (>2W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer;ture;2019 IEEE MTT-S International Microwave Symposium (IMS),0
3. High-Performance E-Band Transceiver Chipset for Point-to-Point Communication in SiGe BiCMOS Technology
4. A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth
5. A >200mW SSPA from 76–94GHz, with Peak 28.9% PAE at 86GHz;griffith;2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),0
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