Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors-Reference-Cited by-同舟云学术

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Demonstration of Ultra Low Loop Inductance on a High Efficient GaN Converter Using PCB Embedded Capacitors

Published:2021-09-06 Issue: Volume: Page:
ISSN:
Container-title:2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
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Author:

Nielsen Jesper¹,Ramachandran Rakesh¹,Nymand Morten¹

Affiliation:

1. University Of Southern Denmark,Sdu Electrical Engineering,Odense,Denmark,5230

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570645.pdf?arnumber=9570645

Reference11 articles.

1. Design considerations of an isolated GaN bidirectional dc-dc converter

2. Optimization of a high density gallium nitride based non-isolated point of load module

3. Evaluation of measurement techniques for high-speed GaN transistors

4. Ourpcb;pcb,0

5. A new approach to high efficiency in isolated boost converters for high-power low-voltage fuel cell applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-Dimensional Lattice Structure to Reduce Parasitic Inductance for WBG Power Semiconductor-Based Converters;Electronics;2023-04-09

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