Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions
Author:
Affiliation:
1. University of Warwick School of Engineering,Coventry,United Kingdom
2. University of Bristol,Department of Electrical & Electronic Engineering,Bristol,United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570690.pdf?arnumber=9570690
Reference20 articles.
1. Paralleling six 320A 1200V All-SiC Half-bridge Modules for a Large Capacity Power Stack
2. Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions
3. Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs
4. Effect of Parasitic Inductance Mismatch on Short-Circuit Characterization of Paralleled SiC MOSFETs
5. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules
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1. Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs;IEEE Transactions on Device and Materials Reliability;2024-09
2. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events;IEEE Transactions on Device and Materials Reliability;2023-12
3. Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
4. A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability;Energies;2023-05-28
5. Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench and Asymmetrical Trench SiC MOSFETs;IEEE Open Journal of Power Electronics;2023
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