A new Robust Short-Circuit Protection Gate-Driver Circuit for IGBT with high Desaturation Current
Author:
Affiliation:
1. University of Rostock,Rostock,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570635.pdf?arnumber=9570635
Reference14 articles.
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2. short circuit iii in high power igbts;lutz;2009 13th European Conference on Power Electronics and Applications epe,2009
3. Experimental investigations of trench field stop IGBT under repetitive short-circuits operations
4. In situ Condition Monitoring of IGBTs Based on the Miller Plateau Duration
5. Short Circuit Robustness of an Aged High Power IGBT-Module
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1. Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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