A new Robust Short-Circuit Protection Gate-Driver Circuit for IGBT with high Desaturation Current

Author:

Scholl Felix1,Fuhrmann Jan1,da Cunha Julian1,Eckel Hans-Gunter1

Affiliation:

1. University of Rostock,Rostock,Germany

Publisher

IEEE

Reference14 articles.

1. A New Combined VGE and VCE Based Short-Circuit Detection for High-IC, desat HV-IGBTs and RC-IGBTs;da cunha;PCIM Europe 2018 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2018

2. short circuit iii in high power igbts;lutz;2009 13th European Conference on Power Electronics and Applications epe,2009

3. Experimental investigations of trench field stop IGBT under repetitive short-circuits operations

4. In situ Condition Monitoring of IGBTs Based on the Miller Plateau Duration

5. Short Circuit Robustness of an Aged High Power IGBT-Module

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

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