Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness-Reference-Cited by-同舟云学术

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Event-Triggered Gate Drive for a 1.7 kV Si-SiC Hybrid Switch with IGBT-like Short-Circuit Robustness

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Kayser Felix¹,Eckel Hans-Günter¹

Affiliation:

1. University of Rostock,Rostock,Germany,18059

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264623.pdf?arnumber=10264623

Reference14 articles.

1. A new Robust Short-Circuit Protection Gate-Driver Circuit for IGBT with high Desaturation Current

2. Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch

3. SiC Reliability Aspects

4. Hybrid Switch with SiC MOSFET and fast IGBT for High Power Applications;kayser;PCIM Europe digital days 2021 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2021

5. An Advanced Adjustable Switch Hybrid (ASH) Concept for High Power Automotive Converters;rahimo;PCIM Europe digital days 2021 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2021

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