Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22nm FDSOI Technology
Author:
Affiliation:
1. Fraunhofer IPMS,Center Nanoelectronic Technologies,Dresden,Germany
2. GlobalFoundries,Fab1,Dresden,Germany
3. Brandenburg University of Technology,Ulrich-L.-Rohde Chair of Radio Frequency and Microwave Techniques,Cottbus,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783713.pdf?arnumber=9783713
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. 22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22
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