A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP1dB and 5 dB NF
Author:
Affiliation:
1. TU Dresden,Chair for Circuit Design and Network Theory,Dresden,Germany
2. Fraunhofer IPMS,Dresden,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783227.pdf?arnumber=9783227
Reference9 articles.
1. Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI
2. A Compact 75 GHz LNA with 20 dB Gain and 4 dB Noise Figure in 22nm FinFET CMOS Technology
3. An 80 GHz Power Amplifier with 17.4 dBm Output Power and 18 % PAE in 22 nm FD-SOI CMOS for Binary-Phase Modulated Radars
4. A 22nm FDSOI Technology Optimized for RF/mmWave Applications
5. W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs
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1. A 79 GHz Millimeter-Wave Receiver Frontend with High Linearity for Civil-Automotive Radars in a 22-nm FD-SOI CMOS Technology;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29
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