DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS<sub>2</sub>-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS₂

Published:2023-09-27 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
language:
Short-container-title:

Author:

Chan Yueh-Ju¹,Kola Sekhar Reddy²,Li Yiming¹

Affiliation:

1. National Yang Ming Chiao Tung Univeristy,Institute of Communications Engineering and Parallel and Scientific Computing Laboratory,Hsinchu,Taiwan,300093

2. National Yang Ming Chiao Tung Univeristy,EECS International Graduate Program and Parallel and Scientific Computing Laboratory,Hsinchu,Taiwan,300093

Funder

National Science and Technology Council

Qualcomm

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319639.pdf?arnumber=10319639

Reference18 articles.

1. A first principle Comparative study of electronic and optical properties of 1H – MoS2 and 2H – MoS2

2. A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer

3. Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

4. Thickness dependence of work function, ionization energy, and electron affinity of Mo and W dichalcogenides from DFT and GW calculations

5. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP