Thickness dependence of work function, ionization energy, and electron affinity of Mo and W dichalcogenides from DFT and GW calculations
Author:
Funder
National Research Foundation of Korea
Korea Institute of Science and Technology Information
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.085404/fulltext
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1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Emerging Photoluminescence in Monolayer MoS2
3. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
4. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
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