Layout-Dependent Noise Performance of Single-Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology
Author:
Affiliation:
1. University of Zagreb,Micro and Nano Electronics Laboratory, Faculty of Electrical Engineering and Computing,Zagreb,Croatia,10000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9803295/9803050/09803649.pdf?arnumber=9803649
Reference25 articles.
1. Progress in Quenching Circuits for Single Photon Avalanche Diodes
2. New silicon SPAD technology for enhanced red-sensitivity, high-resolution timing and system integration
3. Progress in Silicon Single-Photon Avalanche Diodes
4. CMOS SPADs with up to 500 μm diameter and 55% detection efficiency at 420 nm
5. A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology
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1. Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS;2024 47th MIPRO ICT and Electronics Convention (MIPRO);2024-05-20
2. A P-type enrichment/High Voltage N-Well Junction Si-SPAD With Enhanced Near-infrared Sensitivity in 180 nm BCD Technology;IEEE Electron Device Letters;2023
3. A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-nm CMOS Process;IEEE Transactions on Electron Devices;2022-09
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