A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE-Reference-Cited by-同舟云学术

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A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE

Published:2022-04-03 Issue: Volume: Page:
ISSN:
Container-title:2021 16th European Microwave Integrated Circuits Conference (EuMIC)
language:
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Author:

Shrestha Amit¹,Doerner Ralf¹,Yacoub Hady¹,Johansen Tom K.²,Heinrich Wolfgang¹,Krozer Viktor¹,Rudolph Matthias¹,Wentzel Andreas¹

Affiliation:

1. Ferdinand-Braun-Institut gGmbH,Berlin,Germany

2. Technical University of Denmark (DTU),Kgs. Lyngby,Denmark

Funder

Forschungsfabrik Mikroelektronik Deutschland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783638.pdf?arnumber=9783638

Reference10 articles.

1. An efficient W-band InP DHBT digital power amplifier

2. A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

3. Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS

4. Generalized Continuous Class-F Harmonic Tuned Power Amplifiers

5. Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz

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