High-Voltage (8.5 kV) Asymmetric IGCT for MVD and HVDC Applications
Author:
Affiliation:
1. Semiconductors,Hitachi Energy,Switzerland
2. Research Center,Hitachi Energy,Sweden
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10213399/10213452/10213487.pdf?arnumber=10213487
Reference11 articles.
1. HVDC Transmission: Technology Review, Market Trends and Future Outlook
2. An RC-IGCT for application at up to 5.3 kV;vemulapati;Proc IEEE ICPE ECCE Asia,2019
3. Modular Multilevel Converters for HVDC Applications: Review on Converter Cells and Functionalities
4. A technology platform for reverse-conducting integrated gate commutated thyristor with 94mm device diameter;wikström;Proc PCIM Europe,2017
5. Recent advancements in IGCT technologies for high power electronics applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Review of Key Technologies in Modeling and Control of DC Transmission Systems Based on IGCT;Electronics;2024-08-02
2. Experimental Investigation on the Turn-Off Current Redistribution Characteristics of IGCT Based on an Isolated Anode Design;IEEE Transactions on Electron Devices;2024-08
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