Advancements in High-Mobility SnO<sub>2</sub>-Based Thin-Film Transistors: Unleashing the Potential for Next-Generation Electronics-Reference-Cited by-同舟云学术

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Advancements in High-Mobility SnO₂-Based Thin-Film Transistors: Unleashing the Potential for Next-Generation Electronics

Published:2024-07-02 Issue: Volume:432 Page:72-75
ISSN:
Container-title:2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
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Author:

Chin Albert¹,Pooja Pheiroijam¹

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu,Taiwan,300

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10615256/10615275/10615518.pdf?arnumber=10615518

Reference30 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

3. Highly Stable Double-Gate Ga–In–Zn–O Thin-Film Transistor

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