InP RTD Detector for THz Applications
Author:
Affiliation:
1. University Duisburg-Essen,Dept. of Components for High-Frequency Electronics (BHE),Germany
2. Institute of Integrated Systems, Ruhr-Universität Bochum,Germany
3. Institute of Electronic Circuits, Ruhr-Universität Bochum,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288943.pdf?arnumber=10288943
Reference18 articles.
1. Large-Signal Modelling of sub-THz InP TripleBarrier Resonant Tunneling Diodes;clochiatti;2020 Third International Workshop on Mobile Terahertz Systems (IWMTS),2020
2. An Overview of Terahertz Imaging with Resonant Tunneling Diodes
3. Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
4. On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHz
5. Triple barrier resonant tunneling diodes for THz emission and sensing
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Packaging Technology for the Realization of Tx and Rx Modules Based on RTD Devices;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17
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