On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHz
Author:
Affiliation:
1. University Duisburg-Essen,Dept. of Components for High-Frequency Electronics (BHE),Germany
2. KU Leuven,Belgium
3. Keysight Technologies,Belgium
Funder
DFG
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9924207/9924285/09924370.pdf?arnumber=9924370
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Wireless Information and Energy Transfer in the Era of 6G Communications;Proceedings of the IEEE;2024
2. Resonant Tunneling Diode- Based THz SWIPT for Microscopic 6G loT Devices;2023 IEEE Globecom Workshops (GC Wkshps);2023-12-04
3. Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes;physica status solidi (a);2023-11-03
4. InP RTD Detector for THz Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. On-wafer characterisation of resonant-tunnelling diodes up to 1.1 THz;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17
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