Compensation of the Warpage of CVD Diamond Wafers using Intermediate Layers for Surface Activated Bonding
Author:
Affiliation:
1. Meisei University,Collaborative Research Center,Tokyo,Japan,1918506
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10129527/10129646/10129652.pdf?arnumber=10129652
Reference6 articles.
1. Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions
2. Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions
3. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
4. Room temperature direct bonding of diamond and InGaP in atmospheric air
5. Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions
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