GaN-on-silicon present challenges and future opportunities
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8189162/8230630/08230650.pdf?arnumber=8230650
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Perturbative effects on the optical extinction of GaN/AlN spherical QD in 0–0.5 eV range;Applied Physics A;2024-05-08
3. A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed;International Journal of High Speed Electronics and Systems;2024-02-23
4. Gallium Nitride Power Amplifiers for Ka-Band Satcom Applications: Requirements, Trends, and the Way Forward;IEEE Microwave Magazine;2023-12
5. Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition;Scientific Reports;2023-11-29
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