Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films
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Published:2005
Issue:12
Volume:54
Page:5901
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Guo De-Feng ,Geng Wei-Gang ,Lan Wei ,Huang Chun-Ming ,Wang Yin-Yue ,
Abstract
Y-doped Al2O3 dielectric films have been fabricated by reactive radio frequency co-sputtering method. Grazing angle incidence x-ray diffraction results show that the as-deposited and annealed films are amorphous. High resolution scanning electron microscope and atomic force microscope have been applied to observe the cross-section and the surface morphology of the thin films. The electric C-V and I-V characteristics were measured at high and variable frequency, respectively. It was found that the dielectric constant k of the films increases remarkably (from 8.14 to 11.8) with increasing Y-doping concentration. The Y—O bond is stronger than Al—O due to the obvious difference in electro-negativity between the two bond members, which enhanced the ionic polarization in the thin films leading to an increase of the dielectric constant. It was supposed that the presence of Y ions changed the structure and atomic coordination of Al2O3. The films were very smooth which meet the requirements of the device.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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