Author:
Wang Jian-Jun ,Fang Ze-Bo ,Ji Ting ,Zhu Yan-Yan ,Ren Wei-Yi ,Zhang Zhi-Jiao , , ,
Abstract
The single crystalline Tm2O3 films are deposited on Si(001) substrates by molecular beam epitaxy, by using x-ray photoelectron spectroscopy, the valence and the conduction-band shifts of Tm2O3 to Si are obtained to be 3.1 0.2 eV and 1.9 0.3 eV, respectively. The energy gap of Er2O3 is determined to be 6.1 0.2 eV. The results of the study show that the Tm2O3 could be a promising candidate for high-k gate dielectrics.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference24 articles.
1. Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (New York: Wiley) p275
2. Huo H B, Liu Z T, Yan F 2008 Mater. Rev. 22 123 (in Chinese) [霍会宾, 刘正堂, 阎锋 2008 材料导报 22 123]
3. Yoannoa. Sougleridis V, Vellianitis G, Dimoulas A 2003 J. Appl. Phys. 93 2003
4. Guo D F, Geng W G, Lan W, Huang C M, Wang Y Y 2005 Acta Phys. Sin. 54 5901 (in Chinese) [郭得峰, 耿伟刚, 兰伟, 黄春明, 王印月 2005 物理学报 54 5901]
5. Li D, Lü S Z, Chen B J, Wang H Y, Tang B, Zhang J H, Hou S G, Huang S H 2001 Acta Phys. Sin. 50 933 (in Chinese) [李丹, 吕少哲, 陈宝玖, 王海宇, 唐波, 张家骅, 侯尚公, 黄世华 2001 物理学报 50 933]
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献