Effect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure
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Published:2008
Issue:7
Volume:57
Page:4482
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Ding Hong-Lin ,Liu Kui ,Wang Xiang ,Fang Zhong-Hui ,Huang Jian ,Yu Lin-Wei ,Li Wei ,Huang Xin-Fan ,Chen Kun-Ji ,
Abstract
The silicon dioxide (SiO2) film was fabricated from layer-by-layer depositing amorphous silicon (a-Si) film combined with step-by-step plasma oxidation in the plasma-enhanced chemical vapor deposition (PECVD) system. The capacitance-voltage(C-V) and conductance-voltage(G-V) characteristics show that the fixed charge and interface state densities of the SiO2 film are 9×1011 cm-2 and 2×1011 cm-2·eV-1, respectively. Furthermore, the breakdown field strength is as high as 4.6 MV/cm, which is comparable to that formed by hot oxidation. The prepared SiO2 is employed as control oxide in nc-Si based double-barrier floating gate memory structure and is found to be an effective way to prevent the charge exchange between the gate electrode and nc-Si, which also lead to an enhancement in the retention time. The improved performance of the memory is discussed and is ascribe to the moderate-thickness of SiO2 as well as its excellent electrical properties.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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