Author:
Wu Wen-Qing ,Shi Tong-Fei ,Zhang Guo-Bin ,Fu Yi-Bing ,Pan Zhi-Yun ,Sun Zhi-Hu ,Yan Wen-Sheng ,Xu Peng-Shou ,Wei Shi-Qiang ,
Abstract
Zn1-xCoxO (x=0.01, 0.02) dilute magnetic semiconductor thin films deposited on Si (001) substrates at 650℃ by pulsed laser deposition method were studied by X-ray absorption fine structure, X-ray diffraction and magnetic measurement. The typical ferromagnetic hysteresis curves were obtained by superconducting quantum interference device magnetometry at room temperature. The X-ray diffraction results showed that Zn1-xCoxO films were of the wurtzite structure. The X-ray absorption fine structure results revealed that the Co atoms were incorporated into the ZnO lattice and located at the substitutional Zn sites, and a homogeneous phase of Zn1-xCoxO was formed. Comparing the experimental curves with the theoretical calculation results, the additional peak C was assigned to the oxygen vacancies, which indicated that the ferromagnetism of Zn1-xCoxO films was strongly correlated with the existence of oxygen vacancies.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
3 articles.
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