An Oxide-Diluted Magnetic Semiconductor: Co-Doped ZnO

Abstract

The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.