Structural study of MnxSi1-x magnetic semiconductor thin films
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Published:2008
Issue:7
Volume:57
Page:4322
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Ren Peng ,Liu Zhong-Liang ,Ye Jian ,Jiang Yong ,Liu Jin-Feng ,Sun Yu ,Xu Peng-Shou ,Sun Zhi-Hu ,Pan Zhi-Yun ,Yan Wen-Sheng ,Wei Shi-Qiang ,
Abstract
The structure of MnxSi1-x magnetic semiconductor thin films prepared by molecular beam epitaxy(MBE) on Si(100) substrate at 600 ℃ has been studied by X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES) technique. The XRD results show that in the MnxSi1-x thin films with high Mn doping concentrations (x=0.08 and 0.17), only diffraction peaks of crystalline Mn4Si7 are observed. XANES results indicate that all the Mn K-edge XANES spectra of MnxSi1-x thin films with different Mn doping concentrations (x=0.007, 0.03, 0.08 and 0.17) show the similar feature. XANES calculation based on multiple-scattering theory further reveals that the experimental spectra for samples with different Mn doping concentrations are reproduced by the calculated Mn4Si7 spectrum. These results reveal that for the MnxSi1-x magnetic semiconductor thin films, Mn atoms mainly exist in the Si thin film substrate in the form of Mn4Si7 nanocrystalline grains, the substitutional or interstitial Mn atoms scarcely exist.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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