Author:
Zhuo Qing-Qing ,Liu Hong-Xia ,Yang Zhao-Nian ,Cai Hui-Min ,Hao Yue ,
Abstract
Based on 0.8 μm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference9 articles.
1. Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
2. Paillet P, Gaillardin M, Ferlet-Cavrois V, Torres A, Faynot O, Jahan C, Tosti L, Cristoloveanu S 2005 IEEE Trans. Nucl. Sci. 52 2345
3. Adell P C, Barnaby H J, Schrimpf R D, Vermeire B 2007 IEEE Trans. Nucl. Sci. 54 2174
4. Liu Z L Hu Z X Zhang Z X Shao H Ning B X Bi D W Chen M Zou S C 2011 ActaPhys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
5. Fleetwood D M, Shaneyfelt M R, Schwank J R, Winokur P, Sexton F 1989 IEEE Trans. Nucl. Sci. 36 1816
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献