Author:
Ning Bing-Xu ,Hu Zhi-Yuan ,Zhang Zheng-Xuan ,Bi Da-Wei ,Huang Hui-Xiang ,Dai Ruo-Fan ,Zhang Yan-Wei ,Zou Shi-Chang , ,
Abstract
The effects of total ionizing dose on narrow-channel N-type metal-oxide-semiconductor field-effect-transistors (NMOSFETs) in a 130 nm partially depleted silicon-on-insulator (SOI) technology are presented. The charge conservation principle is utilized to analyze the radiation-induced narrow-channel effect (RINCE). In addition, it is found for the first time, as for as we know that for the narrow-channel NMOSFETs operated in the linear region, the radiation-induced positive charges trapped in the shallow trench isolation can increase the probability of electron-electron collisions and surface roughness scattering, resulting in the degradation of the carrier mobility and transconductance of the main transistor. Finally, the RINCE as well as the degradation of the carrier mobility has been verified by our three-dimensional device simulation; and good agreement between the simulation and experimental results is obtained.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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