Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Published:2012 Issue:23 Volume:61 Page:237804
ISSN:1000-3290
Container-title:Acta Physica Sinica
language:
Short-container-title:Acta Phys. Sin.

Author:

Hu Yi-Bin ,Hao Zhi-Biao ,Hu Jian-Nan ,Niu Lang ,Wang Lai ,Luo Yi ,

Abstract

In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.

Publisher

Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences

Subject

General Physics and Astronomy

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