Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/12/128101/pdf
Reference14 articles.
1. Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes
2. Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot
3. Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots
4. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
5. Lateral ordering of quantum dots by periodic subsurface stressors
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1. Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure;Applied Physics Express;2015-08-17
2. Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes;Chinese Physics B;2015-06
3. Recent progresses on InGaN quantum dot light-emitting diodes;Frontiers of Optoelectronics;2014-09
4. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers;Nanoscale Research Letters;2012-11-07
5. A GaN p—i—p—i—n Ultraviolet Avalanche Photodiode;Chinese Physics Letters;2012-09
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