Author:
Zhang Bin ,Yang Yin-Tang ,Li Yue-Jin ,Xu Xiao-Bo ,
Abstract
The paper deals with the design optimization of SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI). The basic DC and AC current characteristics are obtained and the differences between the SOI and bulk SiGe HBT are analyzed. As the incorporation of SOI substrate makes the SOI SiGe HBT a four-terminal device, the influences of the substrate bias on Gummel plot, output current and avalanche current are studied emphatically. Finally, the physical parameters of material and geometric parameters of the device are discussed by changing the frequency characteristics. Compared with the bulk counterpart, the SOI SiGe HBT is designed and fabricated with a great degree of freedom for better performance. This systematic analysis of SOI SiGe HBT provides a valuable reference for the SOI SiGe BiCMOS circuit design and simulation.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference37 articles.
1. Cressler J, Niu G 2003 Silicon-Germanium Heterojunction Bipolar Transistors (London: Artech House) p12
2. Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Transactions Nuclear Science 35 1099
3. Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada T 2002 IEEE Transactions on Electron Devices 49 271
4. Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Transactions Electron Devices 46 1332
5. Sato F, Hashimoto T, Tatsumi T, Tashiro T 1995 IEEE Transactions on Electron Devices 42 483
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