Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/10/108501/pdf
Reference22 articles.
1. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
2. Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology
3. An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
4. Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments
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1. Total ionizing dose effect on graphene field effect transistors;Journal of the Korean Physical Society;2024-05-31
2. Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect;Chinese Physics B;2024-01-01
3. Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures;Acta Physica Sinica;2024
4. Single event transient of SOI FinFET with total ionizing dose irradiation;Vibroengineering Procedia;2023-10-20
5. Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation;Electronics;2023-02-17
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