Preparation of cubic boron nitride films by radio frequency sputtering

Abstract

Cubic boron nitride (c-BN) thin films with approximate 100% cubic phase and lower compressive stress were prepared on n-Si(111) substrates by radio frequency sputtering. The infrared spectra showed that the negative substrate bias had important effect on the content of cubic phase and the compressive stress of films. In addition, a relatively higher substrate resistivity favored the c-BN formation and reduced the compressive stress.