Author:
Li Bing ,Liu Cai ,Feng Liang-Huan ,Zhang Jing-Quan ,Zheng Jia-Gui ,Cai Ya-Ping ,Cai Wei ,Wu Li-Li ,Li Wei ,Lei Zhi ,Zeng Guang-Gen ,Xia Geng-Pei ,
Abstract
Impurities and deep levels in CdS/CdTe thin film solar cells with no back-contact layer were studied by deep level transient spectroscopy and photoluminescence. They could lower the device performance notably. Distribution of net carrier concentration was obtained. Two deep levels at Ev+0.365 eV and Ev+0.282 eV were determined with concentration of 1.67×1012 cm-3 and 3.86×1011 cm-3, respectively, and with capture cross section of 1.43×10-14 cm2 and 1.53×10-16 cm2, respectively. They are attributed to chemical impurities like Au and/or a singly charged tellurium vacancy complex, or related to O atoms introduced by the deposition of CdTe in O2 and Ar ambient.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
5 articles.
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