Author:
Zheng Xu ,Li Bing ,Wang Zhao ,Zhang Dong-Ting ,Feng Liang-Huan ,Zhang Jing-Quan ,Cai Ya-Ping ,Zheng Jia-Gui ,Wu Li-Li ,Li Wei ,Lei Zhi ,Zeng Guang-Gen ,
Abstract
Cu would be doped and form deep level centers easily in CdTe solar cells. The deep level centers in ZnTe back contact and graphite back contact CdTe solar cells were studied by deep level transient spectroscopy(DLTS). The electronic density of states on zinc blende CdTe，VCd system and CdTe doping Cu were analyzed with density functional theory. The d-orbital splitting of Cu2+ in C3v and Td fields was obtained. The results show that two deep centers Ev+0206 eV and Ev+0122 eV，respectively，are attributed to substitutional Cu，energy of CdTe is reduced after Cu doping，and Cu could replace Cd.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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