Affiliation:
1. Inner Mongolia University
Abstract
The band structure and the intensity of states of La-doped ZnTe were obtained using the plane wave ultra soft pseudo potential method based on density functional theory (DFT) and generalized gradient approximation (GGA) according to the generally used design of the low resistance Ohmic contact in CdS/CdTe solar cells. We analyzed the electrical properties in the aspect of conductivity, which was improved by the lager electron effective mass and the high level of carrier concentration. In addition, the lattice constant of La-doped ZnTe increased, and La-doped leads to the ZnTe semiconductor degeneration.
Publisher
Trans Tech Publications, Ltd.
Reference8 articles.
1. Xia Zhong-Qiu and Li Rong-Ping: submitted to Chinese Physics B (2011).
2. Dennis Rioux, David W. Niles and Hartmut Höchst, ZnTe: A potential interlayer to form low resistance back contacts in CdS/CdTe solar cells, J. Appl. Physics 73 (1993) 8381.
3. Liu E K, Zhu B S and Luo J S, Physics of semiconductor, National Defense Industry Press, Beijing, 2010, pp.212-214.
4. Zheng Xu, Li Bing, Wang Zhao, Zhang Dong-Ting, Feng Liang-Huan, Zhang Jing-Quan, Cai Ya-Ping, Zheng Jia-Gui, Wu Li-Li, Li Wei, Lei Zhi and Zeng Guang-Gen, Cu deep level center in CdTe solar cell, Acta Physica Sinica, 59 (2010) 2783.
5. Kevin D. Dobson, Iris Visoly-Fisher, Gary Hodes and David Cahen, Stability of CdTe/CdS thin-film solar cells, Solar Energy Materials & Solar Cell, 62 (2000) 295.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献