Author:
Yan Qi-Rong ,Zhang Yong ,Yan Qi-Ang ,Shi Pei-Pei ,Zheng Shu-Wen ,Niu Qiao-Li ,Li Shu-Ti ,Fan Guang-Han ,
Abstract
The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode (LED) is investigated numerically. The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer (EBL), the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells, and further reduce the efficiency dro of dual-blue wavelength LED at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition. It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16, while the emission spectrum is more stable at high current with an Al composition of 0.12.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference22 articles.
1. Nakamura S, Fasol G 1997 The Blue Laser Diode: GaN BasedLight Emitters and Lasers (Berlin: Springer) p216
2. Yamada M, Naitou T, Izumo K, Tamaki H, Murazaki Y, Kameshima M, Mukai T 2003 Jpn. J. Appl. Phys. 42 L20
3. Sheu J K, Chang S J, Kuo C H, Su Y, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photonics Techol. Lett. 1518
4. Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 595002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 物理学报 59 5002]
5. Ozden I, Makarona E, Nurmikko A V, Takeuchi T, KramesM2001Appl. Phys. Lett. 79 2532
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献