Performance improvement of light-emitting diodes with double superlattices confinement layer-Reference-Cited by-同舟云学术

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Performance improvement of light-emitting diodes with double superlattices confinement layer

Published:2018-11 Issue:11 Volume:39 Page:114005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Cheng Cheng,Lei Yan,Liu Zhiqiang,He Miao,Li Zhi,Yi Xiaoyan,Wang Junxi,Li Jinmin,Xiong Deping

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/39/i=11/a=114005/pdf

Reference25 articles.

1. Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes

2. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

3. Wireless Optofluidic Systems for Programmable In Vivo Pharmacology and Optogenetics

4. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

5. Origin of efficiency droop in GaN-based light-emitting diodes

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1. Study of potassium oxalate based slurry for Copper/Cobalt CMP;Materials Today: Proceedings;2022

2. The influence of residual GaN on two-step-grown GaN on sapphire;Materials Science in Semiconductor Processing;2021-11

3. Enhanced output power of InGaN/GaN light-emitting diodes with a multilayered structure of AlGaN/GaN electron blocking layer;Optoelectronic Devices and Integration IX;2020-10-10

4. Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells;Optoelectronics Letters;2020-03

5. Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment;Applied Surface Science;2020-03

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