Author:
Tang Dong-He ,Du Lei ,Wang Ting-Lan ,Chen Hua ,Chen Wen-Hao ,
Abstract
Recent experiment indicates that shot noise is the dominant excess noise in nanoscale MOSFET. However the early research reported that no shot noise was observed in MOSFET, and thermal noise was the excess noise in short channel MOSFET. Based on the device current model, we derive the conversion conditions for the dominant component of excess noise shifting from thermal noise to shot noise. According to the conversion conditions, the prediction of the noise performance of nanoscale MOSFET is given, and the results coincide with experimental phenomena, simulation data and conclusion of mesoscopic shot noise, which has been reported in the article.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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