Influence of annealing conditions of ZnO films on the properties of ZnS films pr epared by sulfurizing ZnO films

Abstract

ZnS films are prepared on glass and quartz substrates by sulfidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under v arious conditions. The sulfurized films are characterized by using x_ray diffrac tion, scanning electron microscope and UV—VIS spectrometer. The results show t hat the crystalline structure and optical properties of the sulfurized films dep end on the annealing conditions. ZnO films annealed in vacuum and pure O2 2 at mosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N22, respectively, are converted t otally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air an d pure N22, respectively, have a high optical transmittance of about 80% at the wavelength of 400—800nm, with the band-gap energies of 366 and 361eV, respectively.