The properties of the as-sputtered ZnO films under different deposition parameters after sulfidation
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Published:2005
Issue:5
Volume:54
Page:2389
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Zhang Ren-Gang ,Wang Bao-Yi ,Zhang Hui ,Ma Chuang-Xin ,Wei Long ,
Abstract
ZnS films are produced on the glass and quartz substrates by sulfidation of the as-sputtered ZnO films in the H2S-H2-N2 mixtu re. The properties of the f ilms are characterized by using the XRD, SEM and transmission measurements. The results show that the ZnS films with a hexagonol structure have a (002) preferre d orientation. The crystallinity and optical transmission spectra of the ZnS fil ms are related to working pressure and Ar/O2 ratio during the deposi tion of t he ZnO films. At the pressure >1Pa, the thickness of the ZnS films is very sma ll, while at the pressure 2 ratio higher or lower than 4∶1 will leads to the poor crystalline ZnS films. Also it is found that the ZnS films formed from the unannealed ZnO films almost have the same grain size as those formed from th e in-air annealed ZnO films, due to the high (002) preferred orientation during the growth of the ZnS films.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy