An optimization method for ion etching yield modeling based on etching velocity matching

Abstract

With the constant development of the microelectronics industry, the etching scale has come up to nanoscale, which makes the plasma etching mechanism attract more and more attention. The profile surface simulation is one of the most significant technologies for the study of ion etching. In the process of ion etching surface simulation, the ion etching yield model serves as an important model for the study of etching mechanism as well as the basic foundation of some simulations such as cellular automata. In order to solve the problem that it is difficult to achieve accurate parameters of etching yield model by adopting the traditional method, the paper proposes an optimization method for ion etching yield modeling based on etching velocity matching. Aiming at reducing the mean square error between the simulated etching velocity and the real etching velocity, it optimizes the parameters of ion etching yield modeling by using the decomposition-based multi-object evolution algorithm, which then is applied to etching simulation process on the basis of cellular automata. And the validity of the proposed method was verified by the experimental results.