Author:
Zhou Chun-Yu ,Zhang He-Ming ,Hu Hui-Yong ,Zhuang Yi-Qi ,Lü Yi ,Wang Bin ,Wang Guan-Yu , ,
Abstract
Based on the structure of strained Si/SiGe NMOSFET, a unified charge model is presented, in which charge conservation is guaranteed by using the charge as the state variable. The model describes device characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions using a smoothing function, and guarantees the continuities of charges and capacitances. Furthermore, capacitance models have been presented using Verilog-A, a language to describe analog behavior. Comparisons between the model and measured data show that the charge model can describe the device characteristics well. The proposed model is useful for the design and simulation of integrated circuits made of strained Si.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference14 articles.
1. O’Neil A G, Antoniadis D A 1996 IEEE Trans. Electron Devices 43 911
2. Wang G Y, Zhang H M, Wang X Y, Wu T F, Wang B 2011 Acta Phys. Sin. 60 077106 (in Chinese)[王冠宇, 张鹤鸣, 王晓艳, 吴铁峰, 王斌 2011 物理学报 60 077106]
3. Wang B, Zhang H M, Hu H Y, Zhang Y M, Shu B, Zhou C Y, Li Y C, L L 2013 Acta Phys. Sin. 62 057103 (in Chinese)[王斌, 张鹤鸣, 胡辉勇, 张玉明, 舒斌, 周春宇, 李妤晨, 吕懿 2013 物理学报 62 057103]
4. Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electronics 50 109
5. Chandrasekaran K, Xin Z, Chiah S B, See G H, Bera L K, Balasubramanian N, Rustagi S C 2006 IEEE Electron Devices Lett. 27 62
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献