Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET
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Published:2005
Issue:6
Volume:54
Page:2918
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Xu Jing-Ping ,Li Chun-Xia ,Wu Hai-Ping ,
Abstract
High-temperature electrical properties of 4H-SiC n-MOSFET are simulated and anal yzed by considering changes of mobility and threshold voltage with temperature. The simulated results are in good agreement with experimental data. Further mor e, influences of main structural and technological parameters on high-temperatur e electrical properties of devices are discussed for obtaining optimum values o f these parameters.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
2 articles.
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