Author:
Liu Li-Feng ,Lü Hui-Bin ,Dai Shou-Yu ,Chen Zheng-Hao ,
Abstract
Simple p_n diodes have been fabricated by direct growth of La0.9Sr0.1MnO3 thin films on n_type silicon substrates.These junctio ns exhibit good rectifying characteristic in a wide temperature range from 50 to 280K.Large magnetoresistance up to 70% was observed in a low field of 3×10-2T in th ese junctions.The junction magnetoresistance depends on bias and temperature.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
8 articles.
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