Author:
Qu Jiang-Tao ,Zhang He-Ming ,Qin Shan-Shan ,Xu Xiao-Bo ,Wang Xiao-Yan ,Hu Hui-Yong ,
Abstract
In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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