Author:
Wang Xiong ,Cai Xi-Kun ,Yuan Zi-Jian ,Zhu Xia-Ming ,Qiu Dong-Jiang ,Wu Hui-Zhen ,
Abstract
Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
6 articles.
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