Author:
Zhang Zhi-Feng ,Zhang He-Ming ,Hu Hui-Yong ,Xuan Rong-Xi ,Song Jian-Jun ,
Abstract
The model of nMOSFET threshold voltage was established based on study of voltage distribution in strained Si film,which was grown on relaxed SiGe virtual substrate.The model was analyzed with reasonable parameters, and the dependence of threshold voltage on Ge fraction and channel doping was revealed. The dependence of threshold voltage shift on Ge fraction was also obtained. The relationship between threshold voltage and strained Si layer thickness and doping was studied. The results indicates, the threshold voltage increases with increasing doping concentrations of relaxed SiGe layer, decreases with increasing Ge fraction of relaxed SiGe layer, and increases with increasing strained Si layer thickness. This threshold voltage model provides valuable reference to the strained-Si device design.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献