Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate
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Published:2013
Issue:21
Volume:62
Page:218502
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Wang Bin ,Zhang He-Ming ,Hu Hui-Yong ,Zhang Yu-Ming ,Song Jian-Jun ,Zhou Chun-Yu ,Li Yu-Chen ,
Abstract
A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of “gate engineering” and “strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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