Author:
He Bao-Ping ,Wang Gui-Zhen ,Zhou Hui ,Gong Jian-Cheng ,Luo Yin-Hong ,Jiang Jing-He ,
Abstract
Linear response theory was used to predict threshold-voltage shifts for CC4007-NMOS device at dose rates of 0.1, 2.3, 44 and 91rad(Si)/s. These predictions were compared with the threshold-voltage shifts obtained after 60Co irradiations actually performed at these dose rates, and the agreement is excellent. Also, we use the linear response theory to predict the response of CC4007-NMOS device during radiation and 25℃ annealling for high and low-dose-rates. According to the predictions, under the same conditions of radiation and annealling, the threshold-voltage shifts caused by high dose-rate irradiation after room temperature annealling were equal to that by low-dose-rate irradiation within the limit of error, but the total times for both were the same. Finally, the failure doses for CC4007-NMOS device at different dose rates of irradiation were predicted also using the linear response theory.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
8 articles.
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